SIRECT MUR860
Ultra Fast Recovery Diodes
MAXIMUM RATINGS
16 8 130 100 110 85 95 50 50 36 37 -40...+150 150 -40...+150 50 0.4...0.6 2 Unit A A A2s oC W Nm g MUR820, MUR860, MUR8100 Ultra Fast Recovery Diodes Symbol Test Conditions IR VF VTO rT RthJC RthCK RthJA trr IRM TVJ=25oC; VR=VRRM TVJ=25oC; VR=0.8.VRRM TVJ=125oC; VR=0.8.VRRM IF=8A; TVJ=150oC TVJ=25oC For power-loss calculations only TVJ=TVJM IF=1A; -di/dt=50A/us; VR=30V; TVJ=25oC VR=350V; IF=8A; -diF/dt=64A/us; L<_0.05uH; TVJ=100oC Characteristic Values typ. max. 20 10 1.5 1.3 1.5 0.98 28.7 2.5 0.5 60 35 50 2.5 2.8 Unit uA uA mA V V m K/W ns AFEATURES
* International standard package JEDEC TO-220AC * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviourAPPLICATIONS
* Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating and me...