• Part: SNA-100S
  • Description: Cascadable GaAs HBT MMIC Amplifier
  • Manufacturer: SIRENZA MICRODEVICES
  • Size: 199.86 KB
Download SNA-100S Datasheet PDF
SIRENZA MICRODEVICES
SNA-100S
SNA-100S is Cascadable GaAs HBT MMIC Amplifier manufactured by SIRENZA MICRODEVICES.
Description Sirenza Microdevices’ SNA-100S is a Ga As monolithic broadband amplifier (MMIC) in die form. This amplifier provides 12.2d B of gain at 1950 MHz and 10.3d B at 10,000 MHz. These unconditionally stable amplifiers are designed for use .. as general purpose 50 ohm gain blocks. Its small size (0.350mm x 0.345mm) and gold metallization make it an ideal choice for use in hybrid circuits. The SNA-100S is 100% DC tested and sample tested for RF performance. External DC decoupling capacitors determine low frequency response. The use of an external resistor allows for bias flexibility and stability. The SNA-100S is supplied in gel paks of 100 devices. Also available in packaged form (SNA-176 & SNA-186) Output Power vs. Frequency 13 12 DC-10 GHz, Cascadable Ga As HBT MMIC Amplifier Product Features - Cascadable 50 Ohm Gain Block - 12.2d B Gain, +11d Bm P1d B - 1.5:1 Input and Output VSWR - Operates From Single Supply - Through wafer via for ground Applications - Broadband Driver Amplifier for Fiber & CATV transmitters - IF Amplifier or gain stage for VSAT, LMDS, WLAN, and Cellular Systems d Bm 11 10 9 8 0.5 1 1.5 2 GHz Symbol Parameter Units d B d B d B d B d B d B GHz d Bm d Bm d Bm d Bm d B d B d B V m A d B/°C °C/W Frequency 850 MHz 1950 MHz 2400 MHz 6000 MHz 10000 MHz 0.1-8 GHz 1950 MHz 10000 MHz 1950 MHz 10000 MHz 1950 MHz 1950 MHz 0.1-10 GHz M in. T yp. 12.5 12.2 12.0 12.5 10.3 +/- 0.5 10.5 11.0 11.5 24.0 24.0 5 13 16 3.6 40 -0.0015 280 M ax. Gp Small Signal Power Gain [2] Gain Ripple GF BW 3d B 3d B Bandwidth P 1d B OIP 3 NF RL ISOL VD Output Power at 1d B pression [2] Output Third Order Intercept Point [2] Noise Figure Input / Output Return Loss Reverse Isolation Device Operating Voltage [1] 9 9.5 21 21 3.1 35 4.1 45 Device Operating Current [1] ID d G/d T Device Gain Temperature Coefficient R TH , j-b Thermal Resistance (junction to backside) Test Conditions: VS = 8 V RBIAS = 110...