SKJF850N65
SKJF850N65 is SJMOS N-MOSFET manufactured by SKYSILICON.
Features
- Skysilicon Super_Junction Gen1 technology
- Much lower Ron- A performance for On-state efficiency
- Much lower FOM for fast switching efficiency
Applications
- LED/LCD/PDP TV and monitor Lighting
- Solar/Renewable/UPS-Micro Inverter System
- Charger
- Power Supply
Product Summary
VDS RDS(on)_typ ID
650V 0.73Ω 5A
100% Avalanche Tested
Package Marking and Ordering Information
Part # SKJF(H&D)850N65
Marking
- Package Packing
TO-220
Tube
Reel Size N/A
Tape Width N/A
Qty 50pcs
Absolute Maximum Ratings
Parameter Drain-source voltage Continuous drain current
TC = 25°C TC = 100°C Pulsed drain current (TC = 25°C, tp limited by Tjmax) Avalanche energy, single pulse (L=60m H, Rg=30Ω) Gate-Source voltage Power dissipation (TC = 25°C) Operating junction and storage temperature
Symbol VDS
Value 650
Unit V
ID pulse EAS VGS Ptot
Tj , T stg
5 2.5 20 76 ±30 49 -55...+150
A m J V W °C
Rev...
