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SLN1N60C - N-Channel MOSFET

Datasheet Summary

Description

This Pow er MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode.

Features

  • 0.7A, 600V, RDS(on) = 11.50Ω @VGS = 10 V.
  • Low gate charge ( typical 5.2nC).
  • High ruggedness.
  • Fast wsitching.
  • 100% avalanche tested.
  • Improved dv/dt capability Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2).

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Datasheet Details

Part number SLN1N60C
Manufacturer SL SEMI
File Size 140.33 KB
Description N-Channel MOSFET
Datasheet download datasheet SLN1N60C Datasheet
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    SLN1N60C 600V N-Channel MOSFET General Description This Pow er MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency sw itched mode power supp lies, active power factor corr ection based on half br idge topology. Features • 0.7A, 600V, RDS(on) = 11.50Ω @VGS = 10 V • Low gate charge ( typical 5.
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