SLN1N60C
Description
This Pow er MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.
Key Features
- 0.7A, 600V, RDS(on) = 11.50Ω @VGS = 10 V
- Low gate charge ( typical 5.2nC)
- High ruggedness
- Fast wsitching
- 100% avalanche tested
- Improved dv/dt capability
