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SLN1N60C - N-Channel MOSFET

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SLN1N60C N-Channel MOSFET by SL SEMI - Datasheet Preview — Datasheet preview – SLN1N60C

Datasheet Details

Part number	SLN1N60C
Manufacturer	SL SEMI
File Size	140.33 KB
Description	N-Channel MOSFET
Datasheet	SLN1N60C Datasheet
Additional preview pages of the SLN1N60C datasheet.

Product details

Description

This Pow er MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

Features

0.7A, 600V, RDS(on) = 11.50Ω @VGS = 10 V.
Low gate charge ( typical 5.2nC).
High ruggedness.
Fast wsitching.
100% avalanche tested.
Improved dv/dt capability Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2).

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Published: Apr 11, 2017 |