SLP2N60C - N-Channel MOSFET

Product Overview

Datasheet Details

Part number	SLP2N60C
Manufacturer	SL SEMI
File Size	314.97 KB
Description	N-Channel MOSFET
Datasheet	SLP2N60C Datasheet
Additional preview pages of the SLP2N60C datasheet.

SLP2N60C Product details

Description

This Pow er MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode.

Features

2.0A, 600V, RDS(on) = 5.00Ω @VGS = 10 V.
Low gate charge ( typical 9nC).
High ruggedness.
Fast wsitching.
100% avalanche tested.
Improved dv/dt capability {D GDS TO-220 GD S TO-220F.
◀▲ {G.
{S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Sourc.

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Published: Apr 11, 2017 |