Datasheet4U Logo Datasheet4U.com

SLW20N50C - N-Channel MOSFET

Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 20.0A, 500V, RDS(on) = 0.26Ω @VGS = 10 V.
  • Low gate charge ( typical 70nC).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) EAR Repetitive Avalanche En.

📥 Download Datasheet

Datasheet preview – SLW20N50C

Datasheet Details

Part number SLW20N50C
Manufacturer SL SEMI
File Size 742.88 KB
Description N-Channel MOSFET
Datasheet download datasheet SLW20N50C Datasheet
Additional preview pages of the SLW20N50C datasheet.

📁 Similar Datasheet

  • SLW201610S - Wire Wound SMD Power Inductor (Sunltech)
  • SLW24N50C - N-Channel MOSFET (Maple Semiconductor)
  • SLW252010 - Wire Wound SMD Power Inductor (Sunltech)
  • SLW252012 - Wire Wound SMD Power Inductor (Sunltech)
  • SLW252012P - Wire Wound SMD Power Inductor (Sunltech)
  • SLW28N50C - N-Channel MOSFET (Maple Semiconductor)
  • SLW10N80UZ - 800V N-Channel MOSFET (Maple Semiconductor)
  • SLW10N80UZ - N-Channel MOSFET (Maple Semiconductor)
  • SLW18N50C - N-Channel MOSFET (Maple Semiconductor)
  • SLW3010 - Wire Wound SMD Power Inductor (Sunltech)
Other Datasheets by SL SEMI

    Full PDF Text Transcription

    Click to expand full text
    SLW20N50C 500V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features • 20.0A, 500V, RDS(on) = 0.
    Published: |