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SH5126SV351816-SE Datasheet 4gb (512mx64) Ddr3 Sdram Module

Manufacturer: SMART Modular

Overview: SH5126SV351816-SE July 13, 2015 Part Numbers SH5126SV351816-SE Ordering.

Datasheet Details

Part number SH5126SV351816-SE
Manufacturer SMART Modular
File Size 449.96 KB
Description 4GB (512Mx64) DDR3 SDRAM Module
Datasheet SH5126SV351816-SE-SMARTModular.pdf

General Description

512Mx64 (4GB), DDR3, 204-Pin Unbuffered SO-DIMM, Non-ECC, 512Mx8 Based, PC3L-12800, DDR3L-160011-11-11, 30.00mm, 1.35V/1.5V, Halogen-Free (RoHS pliant).

Device Vendor Samsung, Rev.

E K4B4G0846E-BYK0 (All specifications of this module are subject to change without notice.) Corporate Headquarters: 39870 Eureka Dr., Newark, CA, 94560, USA • Tel: (510) 623-1231 • Fax: (510) 623-1434 • E-mail: info@smartm.

Key Features

  • Standard = JEDEC.
  • ZQ calibration supported.
  • Configuration = Non-ECC.
  • On chip DLL align DQ, DQS and DQS transition.
  • Number of Module Ranks = 1 with CK transition.
  • Number of Devices = 8.
  • DM write data-in at both the rising and falling.
  • VDD = VDDQ = 1.35V/1.5V.
  • VDDSPD = 3.0V to 3.6V.
  • Cycle Time = 1.25ns.
  • CAS Latency = 5, 6, 7, 8, 9, 10, 11.
  • Additive Latency = 0, CL-1, and CL-2.

More Datasheets from SMART Modular

Part Number Description
SH5126SV325816NI 4GB (512Mx64) DDR3 SDRAM Module
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SH5126SV351816-SE Distributor