SH5126SV351816-SE
SH5126SV351816-SE is 4GB (512Mx64) DDR3 SDRAM Module manufactured by SMART Modular.
Description
512Mx64 (4GB), DDR3, 204-Pin Unbuffered SO-DIMM, Non-ECC, 512Mx8 Based, PC3L-12800, DDR3L-160011-11-11, 30.00mm, 1.35V/1.5V, Halogen-Free (Ro HS pliant).
Device Vendor
Samsung, Rev. E K4B4G0846E-BYK0
(All specifications of this module are subject to change without notice.)
Corporate Headquarters: 39870 Eureka Dr., Newark, CA, 94560, USA
- Tel: (510) 623-1231
- Fax: (510) 623-1434
- E-mail: info@smartm. Europe: 305 Nasmyth Building, Scottish Enterprise Tech Park, Glasgow, Scotland, G75 0QD, United Kingdom
- Tel: (+44) 1355 813455
- Fax: (+44) 1355 813456 Latin America: Av. Tegula, 888, Edificio Cristal
- CEA, Ponte Alta, Atibaia, Sao Paulo, Brazil, 12952-820
- Tel: (+55) 11 4417-7200
- Fax: (+55) 11 4417-7219 Asia: Plot 18, Lorong Jelawat 4, Kawasan Perindustrian Seberang Jaya, 13700 Perai, Penang, Malaysia
- Tel: (+604) 399 2909
- Fax: (+604) 399 2963
©2015 SMART Modular
- Confidential
July 13, 2015
Part Number Decode
S H 512
6 SV3
1 6-S E
7 8 9 10
1 SMART Modular Technologies
2 Module Process Technology H: Halogen-Free (Ro HS pliant)
3 Module Address Depth 512: 512M
4 Module Data Bus Width 6: x64
5 Module Configuration SV3: 1.35V/1.5V DDR3 204-Pin Unbuffered SO-DIMM
6 Device Configuration 518: 512Mx8 Based
7 CAS Latency 1: CL 11
8 Device Speed 6: DDR3L-1600
9 Device Vendor S: Samsung
10 Device Revision E: Revision E
Corporate Headquarters: 39870 Eureka Dr., Newark, CA, 94560,...
