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SH5126SV351816-SE - 4GB (512Mx64) DDR3 SDRAM Module

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SH5126SV351816-SE 4GB (512Mx64) DDR3 SDRAM Module by SMART Modular - Datasheet Preview — Datasheet preview – SH5126SV351816-SE

Datasheet Details

Part number	SH5126SV351816-SE
Manufacturer	SMART Modular
File Size	449.96 KB
Description	4GB (512Mx64) DDR3 SDRAM Module
Datasheet	SH5126SV351816-SE Datasheet
Additional preview pages of the SH5126SV351816-SE datasheet.

Product details

Description

512Mx64 (4GB), DDR3, 204-Pin Unbuffered SO-DIMM, Non-ECC, 512Mx8 Based, PC3L-12800, DDR3L-160011-11-11, 30.00mm, 1.35V/1.5V, Halogen-Free (RoHS Compliant).

Samsung, Rev.

Features

Standard = JEDEC.
ZQ calibration supported.
Configuration = Non-ECC.
On chip DLL align DQ, DQS and DQS transition.
Number of Module Ranks = 1 with CK transition.
Number of Devices = 8.
DM write data-in at both the rising and falling.
VDD = VDDQ = 1.35V/1.5V.
VDDSPD = 3.0V to 3.6V.
Cycle Time = 1.25ns.
CAS Latency = 5, 6, 7, 8, 9, 10, 11.
Additive Latency = 0, CL-1, and CL-2.

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Published: Sep 11, 2018 |