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1N4001 - 1.0 SILICON RECTIFIER

Key Features

  • DO-41.
  • Diffused Junction.
  • Low Forward Voltage Drop.
  • High Current Capability.
  • High Reliability.
  • High Surge Current Capability.
  • This is a Pb.
  • Free Device.
  • All SMC parts are traceable to the wafer lot.
  • Additional testing can be offered upon request Circuit Diagram Mechanical Data.
  • Case: molded plastic.
  • Terminals: Plated leads, solderable per MIL-STD- 202, Method 208.
  • Polarity: Cathode band.
  • Mounting Position: Any.
  • Weight.

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Datasheet Details

Part number 1N4001
Manufacturer SMC Diode
File Size 307.72 KB
Description 1.0 SILICON RECTIFIER
Datasheet download datasheet 1N4001 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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1N4001-1N4007 Technical Data Data Sheet N0543, Rev. A 1N4001 THRU 1N4007 1.0 SILICON RECTIFIER Features DO-41  Diffused Junction  Low Forward Voltage Drop  High Current Capability  High Reliability  High Surge Current Capability  This is a Pb − Free Device  All SMC parts are traceable to the wafer lot  Additional testing can be offered upon request Circuit Diagram Mechanical Data  Case: molded plastic  Terminals: Plated leads, solderable per MIL-STD- 202, Method 208  Polarity: Cathode band  Mounting Position: Any  Weight:0.34 grams(approx)  Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.