S3M0025120B Overview
S3M0025120B is a single SiC Power MOSFET packaged in T2PAK case. The device is a high voltage n-channel Enhancement mode MOSFET that has very low total conduction losses and very stable switching characteristics over temperature extremes. The S3M0025120B is ideal for energy sensitive, high frequency applications in challenging environments.
S3M0025120B Key Features
- Positive temperature characteristics, easy to parallel
- Low on-resistance typ. RDS(on) = 25 mΩ
- Fast switching speed and low switching losses
- Very fast and robust intrinsic body diode
- Process of non-bright tin electroplatin. “-A” is an AEC-Q101 qualified device
S3M0025120B Applications
- Positive temperature characteristics, easy to parallel