STF2060C Datasheet PDF

FEATURES

● 150 °C TJ operation
● Ultralow forward voltage drop
● High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
● High frequency operation
● Guard ring for enhanced ruggedness and long term reliability
● Trench MOS Schottky technology
● This is a Pb − Free Device
● All SMC parts are traceable to the wafer lot
● Additional testing can be offered upon request Circuit Diagram

APPLICATIONS

STF2060C

MAXIMUM RATINGS

: STF2060CR Characteristics Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Peak One Cycle Non-Repetitive Surge Current(Per Leg) Symbol VRRM VRWM VR IF (AV) IFSM
● Switching power supply
● Converters
● Free-Wheeling diodes
● Reverse battery protection Condition - 50% duty cycle @Tc=100°C, rectangular wave form 8.3ms, Half Sine pulse, Tc=25°C Max. 60 10(Per Leg) 20(Per Device) 150 Units V A A

ELECTRICAL CHARACTERISTICS

: Characteristics Forward Voltage Drop(Per Leg)* Reverse Current(Per Leg)* Junction Capacitance RSM Isolation Voltage (t = 1.0 second, R.