CXG1175UR - High Power DPDT Switch

Product Overview

SONY

Part number	CXG1175UR
Manufacturer	SONY
File Size	87.73 KB
Description	High Power DPDT Switch
Datasheet	CXG1175UR Datasheet
Additional preview pages of the CXG1175UR datasheet.

This IC can be used in wireless communication systems, for example, W-CDMA handsets.

The IC has on-chip logic for operation with 2 CMOS control inputs.

The Sony JPHEMT process is used for low insertion loss and on-chip logic circuit.

Low insertion loss 2 CMOS compatible control line Package Small package size: 20-pin UQFN Structure GaAs JPHEMT MMIC Absolute Maximum Ratings (Ta = 25°C).
Bias voltage.
Control voltage.
Operating temperature.
Storage temperature VDD Vctl Topr Tstg 7 5.
35 to +85.
60 to +150 V V °C °C This IC is ESD sensitive device. Special handling precautions are required. Sony reserves the right to change products and specifications without prior notice. This inform.

📁 Similar Datasheet

CXG1174UR - High Power SP3T Switch (Sony Corporation)
CXG1178K - POWER AMPLIFIER MODULE (Sony Corporation)
CXG1101TN - SP3T Antenna Switch for TDMA800/1900/AMPS800 Triple Mode Application (Sony Corporation)
CXG1108K - Power Amplifier Module for JCDMA (Sony Corporation)
CXG1111EN - 800MHz Band Receive Mixer (Sony Corporation)
CXG1117K - Power Amplifier Module for JCDMA (Sony Corporation)
CXG1121TN - SP4T GSM/GPRS Dual-Band Antenna Switch + Logic (Sony Corporation)
CXG1122EN - SP5T GSM Triple-Band/GPRS Antenna Switch (Sony Corporation)

Other Datasheets by SONY

Published: Jun 12, 2010 |