Datasheet4U Logo Datasheet4U.com

CXG1175UR - High Power DPDT Switch

General Description

This IC can be used in wireless communication systems, for example, W-CDMA handsets.

The IC has on-chip logic for operation with 2 CMOS control inputs.

The Sony JPHEMT process is used for low insertion loss and on-chip logic circuit.

Key Features

  • ‹ Low insertion loss ‹ 2 CMOS compatible control line Package Small package size: 20-pin UQFN Structure GaAs JPHEMT MMIC Absolute Maximum Ratings (Ta = 25°C).
  • Bias voltage.
  • Control voltage.
  • Operating temperature.
  • Storage temperature VDD Vctl Topr Tstg 7 5.
  • 35 to +85.
  • 60 to +150 V V °C °C This IC is ESD sensitive device. Special handling precautions are required. Sony reserves the right to change products and specifications without prior notice. This inform.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com High Power DPDT Switch with Logic Control Preliminary Preliminary CXG1175UR Description This IC can be used in wireless communication systems, for example, W-CDMA handsets. The IC has on-chip logic for operation with 2 CMOS control inputs. The Sony JPHEMT process is used for low insertion loss and on-chip logic circuit. (Applications: Antenna switch for cellular handsets, Dual-band W-CDMA) Features ‹ Low insertion loss ‹ 2 CMOS compatible control line Package Small package size: 20-pin UQFN Structure GaAs JPHEMT MMIC Absolute Maximum Ratings (Ta = 25°C) Š Bias voltage Š Control voltage Š Operating temperature Š Storage temperature VDD Vctl Topr Tstg 7 5 –35 to +85 –60 to +150 V V °C °C This IC is ESD sensitive device. Special handling precautions are required.