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MB84VD21181EM-70 - (MB84VD2118xEM-70 / MB84VD2119xEM-70) Stacked MCP (Multi-Chip Package) FLASH MEMORY

General Description

Pin Name A17 to A0 A19, A18, A-1 SA DQ15 to DQ0 CEf CE1s CE2s OE WE RY/BY UB LB CIOf Function Address Inputs (Common) Address Input (Flash) Address Input (SRAM) Data Inputs / Outputs (Common) Chip Enable (Flash) Chip Enable (SRAM) Chip Enable (SRAM) Output Enable (Common) Write Enable (Common) Ready

Key Features

  • Power Supply Voltage of 2.7 V to 3.3 V.
  • High Performance 70 ns maximum access time (Flash) 70 ns maximum access time (SRAM).
  • Operating Temperature.
  • 40 °C to +85 °C.
  • Package 56-ball FBGA CMOS (Continued) s.

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Other Datasheets by Spansion (now Infineon)

Part Number Description
MB84VD21191EM-70 (MB84VD2118xEM-70 / MB84VD2119xEM-70) Stacked MCP (Multi-Chip Package) FLASH MEMORY

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-50307-1E Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM 16M (×8/×16) FLASH MEMORY & 4M (×8/×16) STATIC RAM MB84VD2118XEM-70/MB84VD2119XEM-70 s FEATURES • Power Supply Voltage of 2.7 V to 3.3 V • High Performance 70 ns maximum access time (Flash) 70 ns maximum access time (SRAM) • Operating Temperature –40 °C to +85 °C • Package 56-ball FBGA CMOS (Continued) s PRODUCT LINE-UP Part No. Supply Voltage(V) Max Address Access Time (ns) Max CE Access Time (ns) Max OE Access Time (ns) MB84VD2118XEM/MB84VD2119XEM VCCf*= 3.0 V 70 70 30 +0.3 V –0.3 V VCCs*= 3.0 V +0.3V –0.3 V 70 70 35 *: Both VCCf and VCCs must be in recommended operation range when either part is being accessed.