GENERAL DESCRIPTION
These products can operate up to 80 MHz and use a single VCC of 1.7 V to 1.95 V that makes them ideal for today’s demanding wireless applications requiring higher density, better performance and lowered power consumption. Distinctive Characteristics Single 1.8 V read/program/erase (1.70–1.95 V) 110 nm MirrorBit™ Technology Simultaneous Read/Write operation with zero latency 32-word Write Buffer Sixteen-bank architecture consisting of 16/8/4 Mwords for WS256N/128N/064N, respectively Four 16 Kword sectors at both top and bottom of memory array 254/126/62 64 Kword sectors (WS256N/128N/ 064N) Programmable burst read modes — Linear for 32, 16 or 8 words linear read with or without wrap-around — Continuous sequential read mode SecSi™ (Secured Silicon) Sector region consisting of 128 words each for factory and customer 20-year data retention (typical) Cycling Endurance: 100,000 cycles per sector (typical) RDY output indicates data available to syste...
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