MU6N70 - Power MOSFET

Features

Drain-Source breakdown voltage: BVDSS=700V (Min. ).
Low gate charge: Qg=14nC (Typ. ).
Low drain-source On resistance: RDS(on)=3.0Ω (Max. ).
100% avalanche tested.
RoHS compliant device Ordering Information Type No. Marking MU6N70 MU6N70 Package Code TO-252-3L PIN Connection D G S G TO-252-3L D S Outline Dimensions unit : mm 1 Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Symbol Drain-source voltage Gate-source voltage Drain curr.

Part Number	Description	Manufacturer

Part Number	Description

Published: Feb 10, 2019 |