SP60R1K8 Description
Pulse Width limited by maximum junction temperature 2. IAS = 0.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. Pulse Width ≤ 300μs, Duty Cycle ≤ 1% V2.0 2 SP60R1K8 650V Super --Junction Power MOSFET Typical Characteristics TJ = 25ºC, unless otherwise noted Figure.
SP60R1K8 Key Features
- Very low FOM RDS(on)×Qg
- 100% avalanche tested
- RoHS pliant