SM140WS Overview
Description
1 Cathode 2 Anode 2 1 Top View Marking Code: SM120WS ---SJ SM130WS --SK SM140WS ---SL Simplified outline SOD-323 and symbol Parameter Maximum Repetitive Peak Reverse Voltage Maximum RMS voltage Maximum DC Blocking Voltage Symbols SM120WS SM130WS SM140WS Units VRRM 20 30 40 V VRMS 14 21 28 V VDC 20 30 40 V Maximum Average Forward Rectified Current Peak Forward Surge Current, 8.3ms Single Half Sine-wave Superimposed On Rated Load (JEDEC method) Maximum Instantaneous Forward Voltage at 1 A at 3 A Maximum Instantaneous Reverse Current at TA = 25°C Rated DC Reverse Voltage TA = 100°C Typical Junction Capacitance Storage and Operating Junction Temperature Range I F ( AV ) 1 A IFSM 25 A 0.45 0.55 0.6 VF V 0.75 0.875 0.9 1 IR mA 10 Cj 110 pF Tj, Tstg -55 ~ +150 °C REV.2018.10.29 Page 1 of 3 SPSEMI Schottky Barrier/SM120WS-SM140WS Average Forward Current (A) Instaneous Forward Current (A) Fig.1 Forward Current Derating Curve 1.2 1.0 0.8 0.6 0.4 0.2 Single phase half-wave 60 Hz resistive or inductive load 0.0 25 50 75 100 125 150 Case Temperature (°C) Fig.3 Typical Forward Characteristic 1.0 0.5 T J =25°C 25°C =1 T J 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Instaneous Forward Voltage (V) Fig.5 Maximum Non-Repetitive Pea.
Key Features
- Metal silicon junction, majority carrier conduction
- Guarding for overvoltage protection
- Low power loss, high efficiency
- High current capability
- low forward voltage drop
