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2KW8629 - Silicon NPN Power Transistor

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High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) High Switching Speed APPLICATIONS Power switching Power amplification Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX VCBO Collector-Base Voltage 450 UNIT V VCEO Collector-Emitter

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Part number 2KW8629
Manufacturer SPTECH
File Size 183.47 KB
Description Silicon NPN Power Transistor
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    SPTECH Product Specification SPTECH Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·High Switching Speed APPLICATIONS ·Power switching ·Power amplification ·Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX VCBO Collector-Base Voltage 450 UNIT V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 6 A 100 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W SPTECH website：www.superic-tech.
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