SPTECH 2KW8629
Silicon NPN Power Transistor
| Part No. | 2KW8629 |
|---|---|
| Datasheet | 2KW8629 Download |
| Manufacturer | SPTECH |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min)●High Switching Speed
APPLICATIONS
●Power switching●Power amplification
●Power driver
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER MAX VCBO Collector-Base Voltage 450 UNIT V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 6 A 100 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W SPTECH website： 2KW8629 1 SPTECH Product Specification SPTECH Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; L= 25mH VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A VBE(sat) Base-Emitter Saturation Voltage IC= 6A...