1N6691 Datasheet | SSDI

FEATURES : - - - - - - - - - Replaces DO-4 and DO-5 Ultra Fast Recovery PIV to 1200 Volts Low Reverse Leakage Hermetically Sealed Void-Free Construction 1/ Monolithic Single Chip Construction High Surge Rating Low Thermal Resistance Available in Surface Mount (-US Suffix) and in Button Tab Mounting (See Data Sheet RU0129). - TX, TXV and Space Level Screening Available 1/ PIND Testing not required on Void-Free Devices per MIL-PRF-19500 Maximum Ratings Peak Repetitive Reverse and DC Blocking Voltage 1N6690 & 1N6690US 1N6691 & 1N6691US 1N6692 & 1N6692US 1N6693 & 1N6693US Average Rectified Forward Current (Resistive Load, 60Hz, Sine Wave, TC = 100 o C Peak Surge Current (8.3 ms Pulse, Half Sine Wave Superimposed on Io, allow junction to reach equilibrium between pulses, TA = 25o C) Operating and Storage Temperature Maximum Thermal Resistance Junction to Lead, L = 3/8" Junction to End Tab SYMBOL VRRM VRWM VR Io VALUE 600 800 1000 1200 20 UNITS Volts Amps IFSM Top & Tstg RθJL RθJE 375 -65 TO +175 3.0 2.5 Amps o C o C/W NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0143C 1N6690 - 1N6693 and 1N6690US - 1N6693US SOLID STATE DEVICES, INC. 14830 Valley View Blvd - La Mirada, Ca 90638 Phone: (562) 404-7855 - Fax: (562) 404-1773 ssdi@ssdi-power. - .ssdi-power. Electrical Characteristics Instantaneous Forward Voltage Drop (IF = 20ADC, 300 - 500 µsec Pulse) Reverse Leakage Current (Rated VR , 300µsec pulse minimum) Junction Capacitance (VR = 10VDC, TA = 25o C, f = 1MHz) Reverse Recovery Time (IF = 500 m A, IR = 1 A, IRR = 250 m A, TA = 25o C) CASE OUTLINE: Axial SYMBOL TA = 25o C TA = -55o C TA = 25o C TA = 100o C VF1 VF2 IR1 IR2 CJ t RR MAXIMUM 1.9 2.2 10 2.0 250 75 UNITS VDC µA m A p F nsec CASE OUTLINE: Surface Mount Square Tab...