SDR1SMS Datasheet | SSDI

FEATURES : Designer’s Data Sheet Part Number/Ordering Information 1/ SDR1 __ __ __ │ │ │ │ │ │ │ │ │ │ └ │ └ Screening 2/ │ __ = Not Screened │ TX = TX Level │ TXV = TXV │ S = S Level │ └ Package Type SM = Surface Mount Round Tab SMM = Surface Mount Mini SMS = Surface Mount Square Tab - - - - - - - - - Voltage A = 50 V B = 100 V D = 200 V G = 400 V J = 600 V K = 800 V M = 1000 V - Ultra Fast Recovery: 50-70 ns Max @ 25°C 4/ 80-120 ns Max @ 100°C 4/ Single Chip Construction PIV to 1000 Volts (1200V Version available Low Reverse Leakage Current Hermetically Sealed For High Efficiency Applications Available in Round, Mini, and Square Tab Versions Metallurgically Bonded TX, TXV, and S-Level Screening Available 2/ Hyper Fast Version available MAXIMUM RATINGS 3/ RATING Peak Repetitive Reverse Voltage And DC Blocking Voltage Average Rectified Forward Current (Resistive Load, 60 Hz, Sine Wave, TA = 25°C) SYMBOL SDR1A .. SDR1B .. SDR1D .. SDR1G .. SDR1J .. SDR1K .. SDR1M .. VALUE 50 100 200 400 600 800 1000 1 25 -65 to +175 28 45 35 UNIT VRRM VRWM VR Volts IO IFSM TOP and TSTG SM SMM SMS Amp Amps °C °C/W Peak Surge Current (8.3 msec Pulse, Half Sine Wave Superimposed on Io, allow junction to reach equilibrium between pulses, TA = 25°C) Operating & Storage Temperature Thermal Resistance, Junction to End Tab RθJE NOTES: 1/ For Ordering Information, Price, Operating Curves, and Availability Contact Factory. 2/ Screened to MIL-PRF-19500. 3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC. SM (Round Tab) SMM (Mini) SMS (Square Tab) 4/ Recovery Conditions: IF = 0.5 Amp, IR = 1.0 Amp, IRR to .25 Amp. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0003D Solid State Devices,...