SDR2HF2.0SMS Datasheet | SSDI

FEATURES : - - - - - - - - - Hyper Fast Recovery: 35 nsec maximum PIV to 2400 Volts Low Reverse Leakage Current Hermetically Sealed Low Thermal Resistance Low trr Change at High Temperature (typical: trr = 55ns @ 100°C) TX, TXV, and Space Level Screening Available. Contact Factory. Fast Recovery Versions Available. Contact Factory. Single Junction Construction Replaces 1N6512 and 1N6513 in many applications. - MAXIMUM RATINGS Reverse Voltage SDR2HF1.8 & SMS SDR2HF2.0 & SMS Average Rectified Forward Current (Resistive Load, 60 Hz, Sine Wave, TA=25o C, L=.125”) Peak Surge Current (8.3 ms Pulse, Half Sine Wave, Superimposed on IO, Allow Junction to Reach Equilibrium between Pulses, TA=25o C, L=.125”) Temperature Range Maximum Thermal Resistance Junction to Lead, L = 0.125” (Axial Lead) Junction to End Tab (Surface Mount) Operating Storage Symbol VRRM VRWM VR IO Value 1800 2000 Units Volts Amps IFSM Amps TOP Tstg RθJL RθJE -65 to +175 -65 to +200 6 4 o o C/W NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0096B SDR2HF1.8 and SMS SDR2HF2.0 and SMS Solid State Devices, Inc. 14701 Firestone Blvd - La Mirada, CA 90638 Phone: (562) 404-4474 - Fax: (562) 404-1773 ssdi@ssdi-power. - .ssdi-power. ELECTRICAL CHARACTERISTICS Breakdown Voltage (IR = 50 µA, TA = 25o C, Pulse) Instantaneous Forward Voltage Drop (TA = 25o C, Pulse) Instantaneous Forward Voltage Drop (TA = -55o C, Pulse) Reverse Leakage Current (VR =85% rated VR, Pulse) Junction Capacitance (VR = 50 VDC, TA = 25o C, f = 1 MHz) Reverse Recovery Time (IF =500 m A, IR =1 A, IRR =250 m A, TA = 25o C) Case Outline: (Axial) SDR2HF1.8 & SMS SDR2HF2.0 & SMS IF1 =1 A IF2 =2 A IF3 =1 A IF4 =2 A TA = 25o C TA = 100o C Symbol BVR VF1 VF2 VF3 VF4 IR1 IR2 CJ trr Min 1800 2000 - -...