SDR429SMS Datasheet | SSDI

Features : - - - - - - - - - High Voltage 700 V continuous Very Fast Switching < 20 n S Low High Temperature Leakage < 15 µA Very Fast Switching @ 100 º C < 35 n S Hermetically Sealed Higher Voltages Available, consult Factory TX, TXV, S Level screening Available Available Axial Leaded or Surface Mount (Square Tab) TX, TXV, S Level screening Available Maximum Ratings Symbol Value Units Peak Repetitive and Peak Surge Reverse Voltage Average Rectified Forward Current (Resistive Load, 60 hz Sine Wave) Non Repetitive Surge Current (8.3 ms Pulse Half Sine Wave Superimposed on Io) Operating & Storage Temperature Maximum Thermal Resistance Junction to Lead, L = 1/8 " Junction to End Tab VRRM VRSM Io IFSM Top & Tstg RθJL RθJE 700 1.0 18 -55 to +175 12 9 Volts Amps Amps ºC ºC/W NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RH0008B SOLID STATE DEVICES INC. 14830 Valley View, La Mirada, Ca 90631 Solid State Devices, Inc. 14830 Valley View Blvd - La Mirada, Ca 90638 Phone: (562) 404-7855 - Fax: (562) 404-1773 ssdi@ssdi-power. - .ssdi-power. SDR429 Electrical Characteristic Symbol Min Typ Max Units Instantaneous Forward Voltage Drop (Tj = 25ºC, 300 µsec pulse) Instantaneous Forward Voltage Drop (Tj = 100ºC, 300 µsec pulse) Instantaneous Forward Voltage Drop (Tj = -55ºC, 300 µsec pulse) Reverse Leakage Current (Vr = 700 V, Tj = 25ºC, 300 µsec pulse) Reverse Leakage Current (Vr = 700 V, Tj = 100ºC, 300 µsec pulse) Reverse Recovery Time (IF = 0.5A, IR = 1A, IRR = 0.25A) Junction Capacitance (Vr=10 Vdc, Tc=25ºC, f=1Mhz) Case Outline: (Axial) If = 1A If = 3A If = 1A If = 3A If = 1A If = 3A Vf1 Vf2 Vf3 Vf4 Vf5 Vf6 Ir1 Ir2 - - - - - - - - - - - -...