SDR529SMS Datasheet | SSDI

FEATURES : Hyper Fast Recovery: 35 nsec maximum PIV up to 900 Volts Avalanche Breakdown Hermetically Sealed For High Efficiency High Voltage Applications Single Chip Construction Metallurgically Bonded TX, TXV, and Space Level Screening Available MAXIMUM RATINGS Peak Repetitive Reverse Voltage and DC Blocking Voltage @ 50µA SDR526 SDR527 SDR528 SDR529 Symbol V RRM V RWM VR IO IFSM TOP & Tstg Rθ JL Rθ JE Value 600 700 800 900 3 Units Volts Average Rectified Forward Current (Resistive Load, 60 Hz, Sine Wave, T A=25o C) Peak Surge Current (8.3 ms Pulse, Half Sine Wave, Superimposed on IO, allow junction to reach equilibrium between pulses, T A=25o C) Operating and Storage Temperature Maximum Thermal Resistance Junction to Lead, L = 0.125” (Axial Lead) Junction to End Tab (Surface Mount) Amps 75 -65 to +175 20 10 Amps o C o C/W NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0049D Solid State Devices, Inc. 14830 Valley View Blvd - La Mirada, Ca 90638 Phone: (562) 404-7855 - Fax: (562) 404-1773 ssdi@ssdi-power. - .ssdi-power. SDR526 thru SDR529 SDR526SMS thru SDR529SMS ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage Drop (IF = 3 ADC, 300 - 500µsec Pulse) Reverse Leakage Current (Rated VR, 300µsec minimum pulse) Junction Capacitance (VR = 10 VDC, T A = 25o C, f = 1 MHz) Reverse Recovery Time (IF = 500 m A, IR = 1 A, IRR = 250 m A, T A = 25o C) Case Outline: (Axial) T A = 25o C T A = -55o C T A = 25o C T A = 100o C Symbol V F1 V F2 IR1 IR2 CJ Min - - - - - - - - - - Max 2.50 2.50 50 250 50 Unit Volts Volts µA µA p F...