SDR6004HF Datasheet | SSDI

Features : - - - - - - - Hyper Fast Recovery: 35nsec Maximum High Surge Rating Low Reverse Leakage Current Low Junction Capacitance Hermetically Sealed, Isolated Package providing enhanced thermal performance Eutectic Die Attach TX, TXV, and S Level Screening iaw MILPRF-19500 Available DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SDR60 __ HF __ __ │ │ │ └ Screening __ = Not Screened │ │ │ TX = TX Level TXV = TXV │ │ │ S = S Level │ │ │ │ │ │ │ │ └ Package N = TO-258 │ │ P = TO-259 │ │ │ └ Configuration hyperfast family │ │ └ Voltage 04 = 400 V 05 = 500 V 06 = 600 V Maximum Ratings Peak Repetitive Reverse Voltage Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave, TC = 100 °C) Peak Surge Current (8.3 ms Pulse, Half Sine Wave, TA = 25 °C) Operating & Storage Temperature Maximum Total Thermal Resistance Junction to Case TO-258 (N) TO-259 (P) Symbol SDR6004HF SDR6005HF SDR6006HF Total VRRM Io IFSM TOP & TSTG RθJC Value 400 500 600 60 750 -65 to +200 1.0 (0.6 typ) Units Volts Amps Amps ºC ºC/W NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0093A Solid State Devices, Inc. 14830 Valley View Blvd - La Mirada, Ca 90638 Phone: (562) 404-7855 - Fax: (562) 404-1773 ssdi@ssdi-power. - .ssdi-power. SDR6006HF Series Symbol IF = 20 A IF = 40 A IF = 60 A TA = -55 ºC TA = 100 ºC TA = 25 ºC TA = 100 ºC VF1 VF2 VF3 Electrical Characteristic Instantaneous Forward Voltage Drop (TA = 25ºC, 300 - 500 µsec Pulse) Instantaneous Forward Voltage Drop (IF = 40A, 300 - 500 µsec Pulse) Reverse Leakage Current (100% of rated VR, 300 µs pulse min.) Reverse Recovery Time (IF = 0.5A, IR = 1A, IRR = 0.25A, TA = 25ºC) Junction Capacitance (VR = 10VDC, TA = 25ºC, f = 1MHz) NOTES: 1/ For Ordering Information, Price, and Availability Contact Factory. Available Part Numbers: SDR6004HFN, SDR6004HFP SDR6005HFN, SDR6005HFP SDR6006HFN, SDR6006HFP TO-258: Min -...