SDR6W Datasheet | SSDI

Features : - - - - - - - - Standard Recovery: 5 usec Maximum High Surge Rating: 75 Amps @ 8.3 m S and 500A @ 100 µS Low Reverse Leakage Current: 5 µA Low Junction Capacitance: 40 p F Low Thermal Resistance: 8 - 12 ºC/W Single Chip Construction Available in Fast and Ultra Fast Speeds. Consult Factory. TX, TXV, and S Level Screening iaw MILPRF-19500 Available DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SDR6 __ __ __ │ │ │ │ │ │ │ │ │ │ └ │ └ Screening __ = Not Screened │ TX = TX Level TXV = TXV │ S = S Level │ │ └ Package ___ = Axial w/ .050" lead diameter A = Axial w/ .040" lead diameter SMS = Surface Mount Square Tab Voltage R = 1400 V T = 1600 V W = 1800 V Maximum Ratings Peak Repetitive Reverse Voltage Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave) Symbol SDR6R SDR6T SDR6W TL @ 1/8" = 25 °C max TTAB = 55 °C max TL @ 1/8" = 25 °C max TTAB = 55 °C max VRRM Io IFSM TOP & TSTG Axial @ 1/8 " SMS RθJL Value 1400 1600 1800 6 75 -65 to +175 12 8 Units Volts Amps Amps ºC ºC/W Peak Surge Current 2/ (8.3 ms Pulse, Half Sine Wave) Operating & Storage Temperature Maximum Total Thermal Resistance Axial Surface Mount Square Tab (SMS) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0094A Solid State Devices, Inc. 14830 Valley View Blvd - La Mirada, Ca 90638 Phone: (562) 404-7855 - Fax: (562) 404-1773 ssdi@ssdi-power. - .ssdi-power. SDR6W series Symbol TA = 25ºC TA = -55ºC TA = 25ºC TA = 100ºC TA = 25ºC TA = 25ºC VF1 VF2 Electrical Characteristics Instantaneous Forward Voltage Drop (IF = 6A,...