SDR810 Datasheet | SSDI

FEATURES : - - - - - - - - Ultra Fast Recovery: 60 nsec maximum. PIV to 1200 Volts. Low Forward Voltage Drop. Low Leakage Current. Hermetically Sealed. Single Chip Construction. For High Efficiency Applications. TX, TXV, and Space Level Screening Available Maximum Ratings Peak Repetitive Reverse and DC Blocking Voltage @ 100µA SDR803 SDR804 SDR805 SDR806 SDR807 SDR808 SDR809 SDR810 SDR811 SDR812 SDR813 SDR814 SDR815 SDR816 SDR817 SDR818 SYMBOL VALUE 50 100 150 200 250 300 350 400 500 600 700 800 900 1000 1100 1200 100 1000 800 700 600 -55 TO +175 0.85 UNITS VRRM VRWM VR Volts Average Rectified Forward Current (Resistive Load, 60Hz, Sine Wave, TA = 25 o C) SDR803 - 806 Peak Surge Current (8.3 ms Pulse, Half Sine Wave, TA = 25o C) SDR807 - 809 SDR810 - 814 SDR815 - 818 Operating and Storage Temperature Maximum Thermal Resistance Junction to Case NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. Io Amps IFSM Amps TOP & TSTG RΘJC o C o C/W DATA SHEET #: RU0059F SDR803 thru SDR818 Electrical Characteristics Instantaneous Forward Voltage Drop (IF = 100ADC, TA = 25o C, 300 - 500µs Pulse) Instantaneous Forward Voltage Drop (IF = 100ADC, TA = -55o C, 300 - 500µs Pulse) Reverse Leakage Current (Rated VR , 300 µs minimum Pulse) Junction Capacitance (VR = 10 VDC, TA = 25o C, f = 1 MHz) Reverse Recovery Time (IF = 500 m A, IR = 1 A, IRR = 250 m A, TA = 25o C) CASE OUTLINE: DO-5 SOLID STATE DEVICES, INC. 14830 Valley View Blvd - La Mirada, Ca 90638 Phone: (562) 404-7855 - Fax: (562) 404-1773 ssdi@ssdi-power. - .ssdi-power. SYMBOL SDR803 - 806...