SDR937M Datasheet | SSDI

FEATURES : Soft Recovery Diode Ultra Fast Recovery: 80 nsec maximum Available in faster recovery versions High Surge Rating Low Reverse Leakage Current Low Junction Capacitance Hermetically Sealed Package Gold Eutectic Die Attach available Ultrasonic Aluminum Wire Bonds Ceramic Seals for improved hermeticity available TX, TXV, and Space Level Screening Available MAXIMUM RATINGS Peak Repetitive Reverse and DC Blocking Voltage SDR936M&Z SDR937M&Z SDR938M&Z SDR939M&Z Symbol VRRM VRWM VR IO Value 600 700 800 900 30 Units Volts Average Rectified Forward Current (Resistive Load, 60 Hz, Sine Wave, TA=25o C) Peak Surge Current (8.3 ms Pulse, Half Sine Wave, TA=25o C) Amps IFSM 500- Amps Operating and Storage Temperature Range TOP Tstg RθJL RθJE -65 to 200 o Maximum Thermal Resistance 6 4 o C/W Note: 1/ - Pin 2&3 connected together; available with higher surge capacity. 2/ For best results, Pin 2&3 must be connected together in the application. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0073B Solid State Devices, Inc. 14701 Firestone Blvd - La Mirada, CA 90638 Phone: (562) 404-7855 - Fax: (562) 404-1773 ssdi@ssdi-power. - .ssdi-power. SDR936M&Z thru SDR939M&Z ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage Drop (IF=15 Adc, TA = 25o C, 300ms Pulse) (IF=30 Adc, TA = 25°C, 300ms Pulse) Instantaneous Forward Voltage Drop (IF=15 Adc,TA = -55o C, 300ms Pulse) (IF=15 Adc,TA = 100°C, 300ms Pulse) Reverse Leakage Current (Rated VR, TA 300ms Pulse minimum) Junction Capacitance (VR = 10 VDC, TA = 25o C, f = 1 MHz) Reverse Recovery Time (IF =500 m A, IR =1 A, IRR =250 m A, TA = 25o C) Case Outline: TO-254(M) Pin1: Cathode Pin 2: Anode Pin 3: Anode Ø.150 .139 .685 .665 .750 .500 Symbol Min...