SDR950Z Datasheet | SSDI

Features : - - - - - - - - - - Hyper Fast Recovery: 50nsec Maximum 3/ High Surge Rating Low Reverse Leakage Current Low Junction Capacitance Hermetically Sealed Package Gold Eutectic Die Attach Ultrasonic Aluminum Wire Bonds Higher Voltages and Faster Recovery Times Available, Contact Factory Ceramic Seal for Improved Hermeticity Available TX, TXV, and S-Level Screening Available 2/ Package M = TO-254, Z = TO-254Z Maximum Ratings SDR950M & Z SDR951M & Z SDR952M & Z Symbol VRRM VRWM VR Io 4/ Value 100 150 200 50 350 -65 to +200 0.85 Units Peak Repetitive Reverse Voltage Volts Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave, TA = 25 °C) 5/ Peak Surge Current (8.3 ms Pulse, Half Sine Wave, or equivalent DC) Operating & Storage Temperature Maximum Total Thermal Resistance Junction to Case 4/ Amps Amps ºC ºC/W IFSM TOP & TSTG Rθ JC - Notes: 1/ For ordering information, Price, Operating Curves, and Availability- Contact Factory. 2/ Screened to MIL-PRF-19500. 3/ Recovery Conditions: IF =10 Amp, di/dt = 200A/µs 4/ Pins 2 and 3 Tied Together. 5/ TC = 150°C, Derate to 0A @ 200°C. - TO-254 (M) - TO-254Z (Z) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RH0039K Solid State Devices, Inc. 14701 Firestone Blvd - La Mirada, CA 90638 Phone: (562) 404-4474 - Fax: (562) 404-1773 ssdi@ssdi-power. - .ssdi-power. SDR950M & Z Thru SDR952M & Z Symbol TA = 25 ºC TA = 25 ºC TA = -55 ºC TA = 25 ºC, Rated VR TC = 100 ºC, 80% of Rated VR VF1 VF2 VF3 IR1 IR2 t RR CJ Electrical Characteristics Instantaneous Forward Voltage Drop (IF = 25A, 300-500µsec Pulse) (IF = 50A, 300-500µsec Pulse) Instantaneous Forward Voltage Drop (IF = 50Adc, 300-500µsec Pulse) Reverse Leakage Current (300µsec Pulse Minimum) Reverse Recovery Time (IF =10 Amp, di/dt = 200A/µs) Junction Capacitance (VR = 10VDC, T A = 25ºC, f = 1MHz) Max 1.00 1.25 1.35 100 10 50...