SDR952S1 Datasheet | SSDI

Features : - Hyper Fast Recovery: 35nsec typical - High Surge Rating - Low Reverse Leakage Current - Low Junction Capacitance - Hermetically Sealed Surface Mount Power Package - Gold Eutectic Die Attach Available - Ultrasonic Aluminum Wire Bonds - TX, TXV, and Space Level Screening Available. Maximum Ratings Peak Repetitive Reverse and DC Blocking Voltage 1/ SDR950S1 SDR951S1 SDR952S1 Symbol VRRM VRWM VR Io Value 100 150 200 Units Volts Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave, TA = 25ºC) Peak Surge Current (8.3 ms Pulse, Half Sine Wave, TA = 25ºC) 1/ Operating & Storage Temperature Maximum Thermal Resistance Junction to Case, 1/ Connect pins 2&3 together Amps IFSM Top & Tstg RθJL Amps -65 to +200 0.8 ºC ºC/W NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RH0037C Solid State Devices, Inc. 14701 Firestone Blvd - La Mirada, CA 90638 Phone: (562) 404-7855 - Fax: (562) 404-1773 ssdi@ssdi-power. - .ssdi-power. SDR950S1 THRU SDR952S1 Electrical Characteristics Instantaneous Forward Voltage Drop (IF=25Adc, TA = 25ºC, 300 µsec pulse) (IF=50Adc, TA = 25ºC, 300 µsec pulse) Instantaneous Forward Voltage Drop (IF= 50Adc, TA = 100ºC, 300 µsec pulse) (IF= 50Adc, TA = -55ºC, 300 µsec pulse) Reverse Leakage Current (Rated VR, TA = 25ºC, 300 µsec pulse minimum) Reverse Leakage Current (Rated VR, TA = 100ºC, 300 µsec pulse minimum) Junction Capacitance (VR = 10 Vdc, TA = 25ºC, f = 1MHz) Reverse Recovery Time (IF = 0.5A, IR = 1A, IRR = 0.25A, TA = 25ºC ) CASE OUTLINE: SMD1 Pin 1: CATHODE Pin 2: ANODE Pin 3:...