SDR9911CT-3 Datasheet | SSDI

Features : - - - - - - - - - Ultra Fast Recovery: 60 nsectypical High Surge Rating Low Reverse Leakage Current Low Forward Voltage Drop Low Junction Capacitance Hermetically Sealed Package Gold Eutectic Die Attach available Ultrasonic Aluminum Wire Bonds TX, TXV, S pace Level Screening Available Consult Factory. Maximum Ratings Peak Repetitive Reverse and DC Blocking Voltage SDR998CT/3 SDR999CT/3 SDR9910CT/3 SDR9911CT/3 SDR9912CT/3 Symbol VRRM VRWM VR Io Value 800 900 1000 1100 1200 100 Units Volts Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave, TA = 25ºC)note 1 Peak Surge Current (8.3 ms Pulse, Half Sine Wave , TA = 25ºC, per leg) Operating & Storage Temperature Maximum Thermal Resistance Junction to Case, each individual diode Junction to Case, note 1 Note 1: Both legs in parallel Amps IFSM Top & Tstg 600 -65 to +200 1.1 0.75 Amps ºC RθJE ºC/W NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0115B DOC http://../ Solid State Devices, Inc. 14701 Firestone Blvd - La Mirada, Ca 90638 Phone: (562) 404-7855 - Fax: (562) 404 -1773 ssdi@ssdi-power. - .ssdi -power. SDR998CT/3 thru SDR9912CT/3 Symbol IF = 25Adc IF = 50Adc IF = 25Adc IF = 25Adc VF1 VF2 IR1 IR2 CJ TA = 25ºC trr Electrical Characteristics Instantaneous Forward Voltage Drop (TA = 25ºC, 300 µsec pulse) Instantaneous Forward Voltage Drop (TA = -55ºC, 300 µsec pulse) (TA = 100ºC, 300 µsec pulse) Reverse Leakage Current (Rated VR, TA = 25ºC, 300 µsec pulse minimum) Reverse Leakage Current (Rated VR, TA = 100ºC, 300 µsec pulse minimum) Junction Capacitance (VR = 10 Vdc, TA = 25ºC, f = 1MHz) Reverse Recovery Time (IF = 500 m A, IR = 1A, IRR = 0.25A) Case Outline: TO-3 Pin1: Cathode Pin2: Anode 1 .135 MAX Pin3: Anode 2 Min - - - -...