SED10HB45 Datasheet | SSDI

FEATURES : - - - - - - - Low Reverse Leakage Low Forward Voltage Drop Hermetically Sealed Power Surface Mount Package Guard Ring for Overvoltage Protection Eutectic Die Attach 175o C Operating Temperature TX, TXV and Space Level Screening Available Maximum Ratings Peak Repetitive Reverse and DC Blocking Voltage Average Rectified Forward Current (Resistive Load, 60Hz, Sine Wave, TC= 100o C) Peak Surge Current (8.3 ms Pulse, Half Sine Wave Superimposed on Io, allow junction to reach equilibrium between pulses, TA = 25o C) Operating and Storage Temperature Maximum Thermal Resistance Junction to Case SYMBOL VRRM VRWM VR Io VALUE 45 10 UNITS Volts Amps IFSM Top & Tstg R2JC 175 -55 TO +175 1.25 Amps o C o C/W NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RS0002C SED10HB45 SED10HE45 Electrical Characteristics Instantaneous Forward Voltage Drop (IF = 10ADC, TA = 25o C, 300 - 500 µs Pulse) Instantaneous Forward Voltage Drop (IF = 10ADC, TA = +125o C, 300 - 500 µs Pulse) Reverse Leakage Current (Rated VR , 300 µsec pulse minimum) Junction Capacitance (VR = 5VDC, TA = 25o C, f = 1MHz) CASE OUTLINE: P/N SED10HB45 CASE OUTLINE: P/N SED10HE45 TA = 25o C TA = 125o C SOLID STATE DEVICES, INC. 14830 Valley View Blvd - La Mirada, Ca 90638 Phone: (562) 404-7855 - Fax: (562) 404-1773 ssdi@ssdi-power. - .ssdi-power. SYMBOL VF1 VF2 IR1 IR2 CJ MAXIMUM 0.55 0.49 2.0 15 900 UNITS VDC VDC m A p F TYPICAL OPERATING CURVES (TA = 25o C unless otherwise specified) PERCENT OF MAXIMUM FORWARD CURRENT RATING (%) 100 80 60 40 20 0 0 50 100 150 200 100o C CASE TEMPERATURE (o...