SED75KB30 Datasheet | SSDI

FEATURES : • • • • • • • Low Reverse Leakage Low Forward Voltage Drop Hermetically Sealed Power Surface Mount Package Guard Ring for Overvoltage Protection Eutectic Die Attach 175o C Operating Temperature TX, TXV and Space Level Screening Available Maximum Ratings Peak Repetitive Reverse and DC Blocking Voltage Average Rectified Forward Current (Resistive Load, 60Hz, Sine Wave, TC= 100o C) Peak Surge Current (8.3 ms Pulse, Half Sine Wave Superimposed on Io, allow junction to reach equilibrium between pulses, TA = 25o C) Operating and Storage Temperature Maximum Thermal Resistance Junction to Case SYMBOL VRRM VRWM VR Io IFSM Top & Tstg R2JC VALUE 30 75 600 -55 TO +175 0.8 UNITS Volts Amps Amps o C o C/W NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: SH0019B SED75KB30 SED75KE30 Electrical Characteristics Instantaneous Forward Voltage Drop (TA = 25o C, 300 :s Pulse) Instantaneous Forward Voltage Drop (IF = 50ADC, TA =+125o C, 300 :s Pulse) Reverse Leakage Current (Rated VR , 300 :sec pulse minimum) Junction Capacitance (VR = 5VDC, TA = 25o C, f = 1MHz) CASE OUTLINE: P/N SED75KB30 PRELIMINARY SOLID STATE DEVICES, INC. SYMBOL IF = 50ADC IF = 75ADC VF1 VF2 VF3 TA = 25o C TA = 125o C IR1 IR2 CJ CASE OUTLINE: P/N SED75KE30 VALUE 0.52 0.60 0.45 2 450 4600 UNITS VDC VDC m A p F (TA = 25o C unless otherwise specified) PERCENT OF MAXIMUM FORWARD CURRENT RATING (%) 100 80 60 40 20 0 0 50 100 150 200 TYPICAL OPERATING CURVES 100o C CASE TEMPERATURE (o...