SFF11N80 Datasheet | SSDI

Features : - - - - - - - - - - - Rugged Construction with Polysilicon Gate Cell Low RDS(ON) and High Transconductance Excellent High Temperature Stability Very Fast Switching Speed Fast Recovery and Superior d V/dt performance Increased Reverse Energy Capability Low Input and Transfer Capacitance for Easy Paralleling Hermetically Sealed, Isolated Package Ceramic Seal Package Available. Contact Factory TX, TXV, S-Level screening available Replacement for IXTH11N80 Types DB = Down Bend UB = Up Bend Package 3/ M = TO-254 Z = TO-254Z Maximum Ratings Drain - Source Voltage Gate - Source Voltage Continues Collector Current Power Dissipation Operating & Storage Temperature Maximum Thermal Resistance Junction to Case TO-254 (M) TO-254Z (Z) TC = 25ºC TC = 55ºC Symbol Value Units VDS VGS ID PD Top & Tstg RθJC 800 ±20 11 150 114 -55 to +175 0.83 Volts Volts Amps W ºC ºC/W NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00213C .. Solid State Devices, Inc. 14830 Valley View Blvd - La Mirada, Ca 90638 Phone: (562) 404-7855 - Fax: (562) 404-1773 ssdi@ssdi-power. - .ssdi-power. SFF11N80 Series Electrical Characteristics 4/ Drain to Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain to Source On State Resistance (VGS = 10V, ID = 5.5A) On State Drain Current (VDS > ID(on) x RDS(on) Max, VGS = 10V) Gate Threshold Voltage (VDS = VGS, ID = 250µA) Gate to Source Leakage (VGS = ±20V) Zero Gate Voltage Drain Current (VGS = 0V) Forward Transconductance - (VDS > ID(on) x RDS(on) Max, ID = 5.5A) Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn on Delay Time Fall Time Diode Forward Voltage - (IF = 11A, VGS = 0V) Diode Reverse Recovery Time (IF = 11A, di/dt = 100A/µsec) Input Capacitance Output Capacitance Reverse Transfer Capacitance NOTES: - Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2% 1/ For Ordering Information,...