SFF120-28Q Datasheet | SSDI

FEATURES : - Rugged construction with poly silicon gate - Low RDS (on) and high transconductance - Excellent high temperature stability - Very fast switching speed - Fast recovery and superior dv/dt performance - Increased reverse energy capability - Low input and transfer capacitance for easy paralleling - Hermetically sealed surface mount package - TX, TXV and Space Level screening available - Replaces 4x IRF120 Types in One Package MAXIMUM RATINGS CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Continuous Drain Current Operating and Storage Temperature Thermal Resistance, Junction to Case (All Four) Total Device Dissipation @ TC = 25o C @ TC = 70o C SYMBOL VDS VGS ID Top & Tstg R 2 JC PD 9.2 AMPS 100 VOLTS 0.35S QUAD N-CHANNEL POWER MOSFET 28 PIN CLCC VALUE 100 ±20 9.2 -55 to +150 10 12.5 9.5 UNIT Volts Volts Amps o C o C/W Watts PACKAGE OUTLINE: 28 PIN CLCC PIN OUT: MOSFET 1 DRAIN: GATE: SOURCE: MOSFET 2 DRAIN: GATE: SOURCE: MOSFET 3 DRAIN: GATE: SOURCE: MOSFET 4 DRAIN: GATE: SOURCE: (3 PLACES) 5, 6, 7 1 2, 3, 4 9, 10, 11 8 12, 13, 14 19, 20, 21 15 16, 17, 18 23, 24, 25 22 26, 27, 28 NOTE: All drain/source pins must be connected on the PC board in order to maximize current carrying capability and to minimize RDS (on) NOTE: All specifications are subject to change without notification. SCDs for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00225B .. PRELIMINARY SOLID STATE DEVICES, INC. 14005 Stage Road - Santa Fe Springs, Ca 90670 Phone: (562) 404-4474 - Fax: (562) 404-1773 ELECTRICAL CHARACTERISTICS @ TJ =25o C (Unless Otherwise Specified) RATING Drain to Source Breakdown Voltage (VGS =0 V, ID =250:A) Drain to Source ON State Resistance (VGS = 10 V, 60% of Rated ID) ON State Drain Current (VDS > ID(on) x RDS(on) Max, VGS = 10 V) Gate Threshold Voltage (VDS =VGS, ID =250:A) Forward Transconductance (VDS > ID(on) x RDS (on) Max, IDS =60% rated ID) Zero Gate Voltage Drain Current (VDS = max rated...