SFF130-5 Datasheet | SSDI

Features : - - - - - - - - - - - - Rugged Construction with Poly Silicon Gate Low RDS(ON) and High Transconductance Excellent High Temperature Stability Very Fast Switching Speed Fast Recovery and Superior d V/dt Performance Increased Reverse Energy Capability Low Input and Transfer Capacitance for Easy Paralleling Hermetically Sealed Package Available in both hot case and isolated versions Ideal for low power applications TX, TXV, Space Level Screening Available 2/ Replacement for IRFF130 Types DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFF130 __ __ │ └ Screening 2/ │ __ = Not Screen │ TX = TX Level │ TXV = TXV Level │ S = S Level │ Package │ └ /5= TO-5 TO-5 Maximum Ratings 3/ Drain - Source Voltage Gate - Source Voltage Continuous Collector Current Power Dissipation Operating & Storage Temperature Thermal Resistance Junction to Case Single Pulse Avalanche Energy NOTES: 1/ For Ordering Information, Price, Operating Curves, and Availability- Contact Factory. 2/ Screened to MIL-PRF-19500. 3/ Unless Otherwise Specified, All Maximum Ratings and Electrical Characteristics @25ºC. TO-5 Case Outline: Symbol VDS VGS TC = 25ºC TC = 100ºC TC = 25ºC TA = 25ºC ID PD Top & Tstg RθJC EAS Value 100 ±20 8 5 25 19 -55 to +150 5 75 Units Volts Volts Amps Watts ºC ºC/W m J NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00019D DOC http://../ Solid State Devices, Inc. 14701 Firestone Blvd - La Mirada, Ca 90638 Phone: (562) 404-7855 - Fax: (562) 404-1773 ssdi@ssdi-power. - .ssdi-power. SFF130/5 Symbol BVDSS ∆BVDSS ∆Tj ID=5A ID=8A RDS(on) VGS(th) gfs Electrical Characteristics @ TJ = 25ºC (Unless Otherwise Specified) Drain to Source Breakdown Voltage (VGS=0 V, ID=250 µA) Temperature Coefficient of Breakdown Voltage Drain to Source On State Resistance (VGS=10 V ) Gate Threshold Voltage (VDS=VGS, ID=250 µA ) Forward Transconductance (VDS>ID(on) X RDS(on) Max,...