SFF40N30Z Datasheet PDF

FEATURES

: Rugged Construction with Polysilicon Gate Cell Low RDS(ON) and High Transconductance Excellent High Temperature Stability Very Fast Switching Speed Fast Recovery and Superior dV/dt Performance Increased Reverse Energy Capability Low Input and Transfer Capacitance for Easy Paralleling Ceramic Seals for Improved Hermeticity Hermetically Sealed Package TX, TXV, Space Level Screening Available Replacement for IXTH40N30 Types Z = TO-254Z
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MAXIMUM RATINGS

Drain – Source Voltage Gate – Source Voltage Continuous Collector Current Power Dissipation Operating & Storage Temperature Maximum Thermal Resistance Junction to Case TO-254 (M) TO-254Z (Z) Symbol VDS VGS ID TC = 25ºC TC = 55ºC PD Top & Tstg RθJC Value 300 ±20 40 150 114 -55 to +150 0.83 Units Volts Volts Amps W ºC ºC/W NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00141E DOC Solid State Devices, Inc. 14...