SFF50N20M Datasheet PDF

FEATURES

: • Rugged construction with polysilicon gate • Low RDS (on) and high transconductance • Excellent high temperature stability • Very fast switching speed • Fast recovery and superior dv/dt performance • Increased reverse energy capability • Low input and transfer capacitance for easy paralleling • Hermetically sealed package • TX, TXV, and Space Level screening available • Replaces: IXTH50N20 Types

MAXIMUM RATINGS

CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Continuous Drain Current Operating and Storage Temperature Thermal Resistance, Junction to Case Total Device Dissipation CASE OUTLINE: TO-254 (Sufix M) @ TC = 25oC @ TC = 55oC SYMBOL VDS VGS ID Top & Tstg R2 JC PD VALUE 200 ±20 50 -55 to +150 0.83 150 114 o UNIT Volts Volts Amps o C C/W Watts CASE OUTLINE: TO-254Z (Sufix Z) NOTE: All specifications are subject to change without notification. SCDs for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00129E SFF50N20M SFF50N20Z PRELIMINARY SOLID STATE DEVICES, INC.