SFF60P05M Datasheet | SSDI

Features : - - - - - - - - - - Rugged Construction with Poly Silicon Gate Low RDS(on) and High Transconductance Excellent High Temperature Stability Very Fast Switching Speed Fast Recovery and Superior dv/dt Performance Increased Reverse Energy Capability Low Input and Transfer Capacitance for Easy Paralleling Hermetically Sealed TX, TXV, and Space Level Screening Available. Consult Factory. Replaces RFG60P05E Types Maximum Ratings Drain - Source Voltage Gate - Source Voltage Continuous Drain Current Operating & Storage Temperature Thermal Resistance, Junction to Case Total Device Power Dissipation TC = 25ºC TC = -55ºC Symbol VDS VGS ID TOP & TSTG ΡθJC PD Value -50 +20 -60 -55 to +150 0.8 156 118 Units V V A ºC ºC/W Watts PACKAGE OUTLINE: TO-254 (M) PACKAGE OUTLINE: TO-254Z (Z) PIN 3 PIN 2 PIN 3 PIN 1 PIN 2 PIN 1 Available with Glass or Ceramic Seals. Contact Factory for Details. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FP0045D .. Solid State Devices, Inc. 14830 Valley View Blvd - La Mirada, Ca 90638 Phone: (562) 404-7855 - Fax: (562) 404-1773 ssdi@ssdi-power. - .ssdi-power. 4/ SFF60P05M SFF60P05Z Symbol BVDSS RDS(on) RDS(on) VGS(th) gfs TA = 25o C TA = 125o C At Rated VGS VGS = -10V VDD = 40V ID = 60A RL = 0.67Ω VDD = 50% Rated VDS 50% Rated ID IG1 = IG2 = 2A RL = 0.83Ω VGS(clamp) = -10V/+0.6V IS = Rated ID VGS = 0V TJ = 25ºC IF = 10A di/dt = 100A/usec VGS = 0V VDS = -25V f = 1 MHz IDSS IGSS Qg Qgs Qgd t(on) td(on) tr t(off) td(off) tf VSD trr Qrr Ciss Coss Crss Electrical Characteristics Min -50...