SFF70N10M Datasheet | SSDI

FEATURES : - Rugged construction with poly silicon gate - Ultra low RDS (on) and high transconductance - Excellent high temperature stability - Very fast switching speed - Fast recovery and superior dv/dt performance - Increased reverse energy capability - Low input and transfer capacitance for easy paralleling - Hermetically sealed package - TX, TXV and Space Level screening available - Replaces: SMM70N10 Types MAXIMUM RATINGS CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Continuous Drain Current Operating and Storage Temperature Thermal Resistance, Junction to Case Total Device Dissipation @ TC = 25 C @ TC = 55o C o SYMBOL VDS V GS ID Top & Tstg R 0JC PD VALUE 100 + 20 56 1/ -55 to +150 .83 150 114 UNIT Volts Volts Amps o C o C/W Watts CASE OUTLINE: TO-254 (Sufix M) Pin Out: Pin 1: Drain Pin 2: Source Pin 3: Gate CASE OUTLINE: TO-254Z (Sufix Z) Pin Out: Pin 1: Drain Pin 2: Source Pin 3: Gate Available with Glass or Ceramic Seals. Contact Facory for details. NOTE: All specifications are subject to change without notification. SCDs for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00247B .. SFF70N10M SFF70N10Z SOLID STATE DEVICES, INC. 14830 Valley View Blvd - La Mirada, Ca 90638 Phone: (562) 404-7855 - Fax: (562) 404-1773 ELECTRICAL CHARACTERISTICS @ TJ =25o C (Unless Otherwise Specified) RATING Drain to Source Breakdown Voltage (VGS =0 V, ID = 250µA) SYMBOL MIN TYP MAX UNIT BVDSS RDS(on) ID(on) VGS(th) gfs IDSS 100 70 2 20 - 0.025 0.03 4.0 250 250 +100 -100 140 40 80 40 180 100 40 1.8 200 - V Drain to Source on State...