SFF9130-28D Datasheet | SSDI

FEATURES : - Rugged construction with poly silicon gate - Low RDS (on) and high transconductance - Excellent high temperature stability - Very fast switching speed - Fast recovery and superior dv/dt performance - Increased reverse energy capability - Low input transfer capacitance for easy paralleling - Hermetically sealed surface mount package - TX, TXV and Space Level screening available - Replaces: 2x IRF9130 Types MAXIMUM RATINGS CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Continuous Drain Current Operating and Storage Temperature Thermal Resistance, Junction to Case (Both) Total Device Dissipation TC = 25o C TC = 55o C TC = 25o C TC = 100o C -11 AMP -100 VOLTS 0.30S DUAL UNMITED P-CHANNEL POWER MOSFET 28 PIN CLCC SYMBOL VDS VGS ID Top & Tstg R 2 JC PD EAS EAR VALUE -100 ±20 -11 -7 -55 to +150 3.5 36 37 84 7.5 UNIT Volts Volts Amps o C o C/W Watts m J m J Single Pulse Avalange Energy Repetitive Avalange Energy PACKAGE OUTLINE: 28 PIN CLCC PIN OUT: SOURCE (1): 16 - 21 DRAIN (1): 24 - 28 GATE (1): 22 SOURCE (2): 9 - 14 DRAIN (2): 2 - 6 GATE (2): 8 NOTE: All drain/source pins must be connected on the PC board in order to maximize current carrying capability and to minimize RDS (on) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FP0035D .. PRELIMINARY SOLID STATE DEVICES, INC. 14830 Valley View Blvd - La Mirada, Ca 90638 Phone: (562) 404-7855 - Fax: (562) 404-1773 ELECTRICAL CHARACTERISTICS @ TJ =25o C (Unless Otherwise Specified) RATING Drain to Source Breakdown Voltage (VGS =0 V, ID =1m A) Temperature Coefficient of Breakdown Voltage Drain to Source ON State Resistance 1/ (VGS = -10 V) Gate Threshold Voltage (VDS =VGS, ID =250:A) Forward Transconductance (VDS > ID(on) x RDS (on) Max, IDS = 7A) Zero Gate Voltage Drain Current (VDS = 80% rated VDS, VGS =0 V, T A = 25o C ) (VDS = 80% rated VDS, VGS =0 V, TA = 125o C ) Gate to...