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SFL3200-39 - N-Channel POWER MOSFET

Key Features

  • Rugged Construction Low RDS(on) and high transconductance Excellent High Temperature Stability Very Fast Switching Speed Fast Recovery and Superior dv/dt performance Increased Reverse Energy Capability Low Input and Transfer Capacitance for Easy Paralleling Hermetically Sealed Package TX, TXV and Space Level Screening Available Logic Level 12A 150V .17Ω N-Channel Power MOSFET TO-39 Symbol Value Unit Max.

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Datasheet Details

Part number SFL3200-39
Manufacturer SSDI
File Size 170.38 KB
Description N-Channel POWER MOSFET
Datasheet download datasheet SFL3200-39 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SFL3200/39 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Features: • • • • • • • • • Rugged Construction Low RDS(on) and high transconductance Excellent High Temperature Stability Very Fast Switching Speed Fast Recovery and Superior dv/dt performance Increased Reverse Energy Capability Low Input and Transfer Capacitance for Easy Paralleling Hermetically Sealed Package TX, TXV and Space Level Screening Available Logic Level 12A 150V .17Ω N-Channel Power MOSFET TO-39 Symbol Value Unit Maximum Ratings Drain to Source Voltage Gate to Source Voltage Continuous Drain Current Peak Drain Current TC = 25 °C 1/ V DS 150 +16 9.3 -55 to 175 13 1.