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SFT8600S.22 - 1 AMP NPN Transistor

Key Features

  • BVCEO minimum 400 volts.
  • Very low saturation voltage.
  • Very low leakage.
  • High gain from 20 mA to 250 mA.
  • 200°C operating temperature.
  • Gold eutectic die attach.
  • Superior performance over JEDEC 2N5010-2N50.

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Datasheet Details

Part number SFT8600S.22
Manufacturer SSDI
File Size 128.08 KB
Description 1 AMP NPN Transistor
Datasheet download datasheet SFT8600S.22 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFT8600 __ __ │ └ Screening 2/ │ __ = No Screening │ TX = TX Level │ TXV = TXV Level │ S = S Level │ │ │ └ Package S.22 = SMD.22 S.5 = SMD.5 Maximum Ratings3/ Collector – Emitter Voltage Collector – Emitter Voltage (RBE = 1KΩ) Collector – Base Voltage Emitter – Base Voltage Collector Current Base Current Power Dissipation @ TC = 75ºC Derate above 75ºC Power Dissipation @ TC = 75ºC Derate above 75ºC Operating & Storage Temperature Thermal Resistance SFT8600S.22 and SFT8600S.