SHF1108SMS Datasheet | SSDI

Features : - Hyper Fast Recovery: 40 nsec maximum - PIV to 900 Volts, Consult Factory - Hermetically Sealed - Void Free Construction - For High Efficiency Applications - Replaces UES 1104, UES1106, IN6624 - TX, TXV, S Level screening Available Maximum Ratings Symbol Value Units Peak Repetitive Reverse and DC Blocking Voltage Average Rectified Forward Current (Resistive Load, 60 hz Sine Wave, TA = 25 °C) Peak Surge Current (8.3 ms Pulse, Half Sine Wave, TA = 25 °C) Operating & Storage Temperature Maximum Thermal Resistance SHF1104 SHF1106 SHF1108 SHF1109 VRRM VRSM VR Io IFSM TOP & TSTG 400 600 800 900 1.0 20 -65 to +175 35 28 Volts Amps Amps ºC ºC/W Junction to Leads, L = 3/8 Junction to Tabs RθJE NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RH0111E Solid State Devices, Inc. 14830 Valley View Blvd - La Mirada, Ca 90638 Phone: (562) 404-7855 - Fax: (562) 404-1773 ssdi@ssdi-power. - .ssdi-power. SHF1104 & SHF1104SMS thru SHF1109 & SHF1109SMS Symbol Max Units Electrical Characteristic Instantaneous Forward Voltage Drop (IF = 1ADC, TA = 25ºC pulsed) Instantaneous Forward Voltage Drop (IF = 1ADC, TA = -55ºC pulsed) Reverse Leakage Current (Rated VR, TA = 25ºC pulsed) Reverse Leakage Current (Rated VR, TA = 100ºC pulsed) Reverse Recovery Time (IF = 500m A, IR = 1A, IRR = 250m A, TA = 25ºC) Junction Capacitance (VR=10VDC, TA=25ºC, f=1MHz) Case Outline: (Axial) 1.35 1.5 10 1 40 22 DIM A B C D MIN 0.100” 0.130” 0.027” 1.00” VDC VDC µA m A nsec p F MAX 0.130” 0.180” 0.033”...