SHF1304 Datasheet | SSDI

Features : - Hyper Fast Recovery: 40 - 50 nsec - PIV to 800 Volts - Hermetically Sealed - Void Free Construction - For High Efficiency Applications - Low Reverse Leakage - Single Chip Construction - Replaces UES 1304 Types Axial Leaded Surface Mount (SMS) Maximum Ratings Peak Repetitive Reverse and DC Blocking Voltage Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave, TA = 25ºC) Peak Surge Current (8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to Reach Equilibrium Between Pulses, TA = 25ºC) Operating & Storage Temperature Maximum Thermal Resistance Junction to Lead, L = 3/8 " Junction to End Tab Symbol SHF1304 SHF1306 SHF1308 VRRM VR Io Value 400 600 800 3.0 Units Volts Amps IFSM Top & Tstg RθJL RθJE 75 -65 to +175 20 14 Amps ºC ºC/W NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RH0101C Solid State Devices, Inc. 14701 Firestone Blvd - La Mirada, Ca 90638 Phone: (562) 404-7855 - Fax: (562) 404-1773 ssdi@ssdi-power. - .ssdi-power. SHF1304 thru SHF1308 SHF1304SMS thru SHF1308SMS Electrical Characteristics Instantaneous Forward Voltage Drop (TA = 25ºC, pulsed) IF = 3A Instantaneous Forward Voltage Drop (TA = -55ºC, pulsed) IF = 3A Reverse Leakage Current (Rated VR, TA = 25ºC, pulsed) Reverse Leakage Current (Rated VR, pulsed) Junction Capacitance (VR = 10 Vdc, TA = 25ºC, f = 1MHz) Reverse Recovery Time (IF = 500 m A, IR = 1A, IRR = 0.25A Notes: 1/ trr on SHF1304 - 1306, 100 ns typical @ 100 °C Case Outline: (Axial) Part...