SPD50SMS Datasheet | SSDI

FEATURES : • • • • • • • Hyper Fast Recovery: 5 nsec maximum Subminiature Surface Mount Package Square Tab Mounting (Round Tabs Available) Hermetically Sealed Planar Passivated Chip For High Efficiency Applications Replaces 1N4148 - 1N4151 types • TX, TXV, and Space Level Screening Available Maximum Ratings Peak Repetitive Reverse and DC Blocking Voltage SPD48SM & SMS SPD49SM & SMS SPD50SM & SMS SPD51SM & SMS SYMBOL VRRM VRWM VR Io IFSM TOP & TSTG R2JE VALUE 50 75 100 125 200 4 -65 TO +200 0.35 UNITS Volts Average Rectified Forward Current (Resistive Load, 60Hz, Sine Wave, TA = 25 o C Peak Surge Current (8.3 ms Pulse, Half Sine Wave Superimposed on Io, allow junction to reach equilibrium between pulses, TA = 25o C) Operating and Storage Temperature Maximum Thermal Resistance Junction to End Tab m Amps Amps o C o C/m W NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RH0085C SPD48SM & SMS thru SPD51SM & SMS Electrical Characteristics Instantaneous Forward Voltage Drop (TA = 25o C, 300 - 500:s Pulse) Instantaneous Forward Voltage Drop (TA = -55o C, 300 - 500:s Pulse) PRELIMINARY SOLID STATE DEVICES, INC. SYMBOL IF = 10 m ADC IF = 100 m ADC IF = 10 m ADC IF = 100 m ADC VF1 VF2 IR1 IR2 CJ t RR CASE OUTLINE: SQUARE TAB "SMS" 14830 Valley View Blvd - La Mirada, Ca 90638 Phone: (562) 404-7855 - Fax: (562) 404-1773 MAXIMUM 1.0 1.2 1.1 1.3 400 40 2.8 5 UNITS VDC VDC n A :A p F nsec Reverse Leakage Current (Rated VR , TA = 25o C, 300 :s minimum Pulse) Reverse Leakage Current (Rated VR , TA = 100o C, 300 :s minimum Pulse) Junction Capacitance (VR = 10 VDC, TA = 25o C, f = 1 MHz) Reverse Recovery Time (IF = 50 m A, IR = 100 m A, IRR = 25 m A, TA = 25o C) CASE OUTLINE: ROUND TAB "SM" DIMENSIONS DIM A B C D 2x C i B A D MIN. -.054" .010" .001" MAX. .150" .085" .028" -- DIMENSIONS DIM A B C D MIN. -.065" .022" .001" B B MAX. .200" .085" .028" -- 2x C (TA = 25o C unless...