SPD6642SMS Datasheet | SSDI

FEATURES : - - - - - - Hyper Fast Recovery: 5 nsec maximum Subminiature Surface Mount Package Round and Square Tab Mounting Hermetically Sealed Planar Passivated Chip For High Efficiency Applications - TX, TXV, and Space Level Screening Available Maximum Ratings Peak Repetitive Reverse and DC Blocking Voltage SYMBOL VRRM VRWM VR Io IFSM TOP & TSTG RθJE VALUE UNITS Volts Average Rectified Forward Current (Resistive Load, 60Hz, Sine Wave, TA = 25 o C Peak Surge Current (8.3 ms Pulse, Half Sine Wave Superimposed on Io, allow junction to reach equilibrium between pulses, TA = 25o C) Operating and Storage Temperature Maximum Thermal Resistance Junction to End Tab 300 2.5 -65 TO +200 0.35 m Amps Amps o C o C/m W NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RH0004A SPD6642SM SPD6642SMS SOLID STATE DEVICES, INC. 14830 Valley View Blvd - La Mirada, Ca 90638 Phone: (562) 404-7855 - Fax: (562) 404-1773 ssdi@ssdi-power. - .ssdi-power. Electrical Characteristics Instantaneous Forward Voltage Drop (TA = 25o C, 300 - 500µs Pulse) Instantaneous Forward Voltage Drop (IF = 10m A, TA = 150o C, 300 - 500µs Pulse) Reverse Leakage Current (TA = 25o C, 300 µs minimum Pulse) Reverse Leakage Current (TA = 150o C, 300 µs minimum Pulse) Junction Capacitance (VR = 1.5VDC, TA = 25o C, f = 1 MHz) Reverse Recovery Time (IF = 10 m A, IR = 10 m A, IRR = 1 m A, TA = 25o C) CASE OUTLINE: ROUND TAB "SM" DIMENSIONS DIM A B C D 2x C i B D A MIN. .130 .054" .010" .001" MAX. .146" .064" .022" -- SYMBOL IF = 10m A IF = 100m A VF1 VF2 VF3 VR = 20V VR = 75V VR = 20V VR = 75V IR1 IR2 IR3 IR4 CJ t RR CASE OUTLINE: SQUARE TAB "SMS" MAXIMUM 1.0 1.2 0.8 25 500 50 100 2.8 5 UNITS VDC VDC n A µA p F nsec DIMENSIONS DIM A B C D MIN. .180 .065" .022" .001" B B D MAX. .200" .085" .028" -- 2x...