• Part: SPMQ461-01
  • Description: HALF BRIDGE IGBT POWER MODULE
  • Manufacturer: SSDI
  • Size: 90.91 KB
Download SPMQ461-01 Datasheet PDF
SSDI
SPMQ461-01
SPMQ461-01 is HALF BRIDGE IGBT POWER MODULE manufactured by SSDI.
FEATURES : - High Current Switching for Motor Drives and Inverters for Space Applications. - Push-Pull Configuration with Freewheeling Diodes. - Low Saturation Voltage at High Currents. - Low Mechanical Stress Design. - Hermetic Sealed Construction for Aerospace Applications. - Excellent Thermal Management. - Full Power Screened Hermetic Discretes. - TX, TXV, and S-Level Screening Available. - Consult Factory for: - Faster Switching Speeds; - Other Bridge Configurations and Terminal Styles. MAXIMUM RATINGS CHARACTERISTIC Collector to Emiter Voltage, per Leg Gate to Collector Voltage Continuous Collector Current, per Leg TB = 25 C TB = 90o C o 200 AMP/600 VOLTS HALF BRIDGE IGBT POWER MODULE FOR SPACE APPLICATIONS ASPM SYMBOL VCES VGES I C1 I C2 I CM I LM EARV TOP & TSTG 1 JB P D1 P D2 VALUE 600 "20 200 100 300 100 5.6 -55 TO +150 0.28 625 5 UNIT Volts Volts Amps Amps Amps m J o o Pulse Collector Current, per Leg 1/ Clamped Inductive Load Current, per Leg (TB = 125 EC, VCC = 480V, VGE = 15V, L = 30u H, RG = 10S Reverse Voltage Avalange Energy, per Leg 1/ (IC = 100A) Operating and Storage Temperature Thermal Resistance, Junction to Base, per Leg Total Module Dissipation, per Leg @TB = 25o C Dissipation Derating from TB = 25o C to TB = 150o C, per Leg 1/ Pulse Duration Limited by TJMAX; Repetative Rating C/W W W/o C ELECTRICAL SCHEMATIC NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: PM0002B PRELIMINARY 14005 Stage Road - Santa Fe Springs, Ca 90670 Phone: (562) 404-4474 - Fax: (562) 404-1773 SOLID STATE DEVICES, INC. ELECTRICAL CHARACTERISTICS @ TJ =25o C, per Leg (Unless Otherwise Specified) RATING Collector - Emitter Breakdown Voltage (ICES = 250:A, VGE = 0V) Gate - Emitter Threshold Voltage (IC = 5m A, VCE = VGE) Collector-Emitter Saturation Voltage (IC = 100A, VGE = 15V) Gate-Emitter Leakage Current (VGE = "20V, VCE = 0V) Collector Leakage...