SPMQ496-01 Datasheet | SSDI

FEATURES : • High Current Switching for Motor Drives and Inverters for Space Applications. • Push-Pull Configuration with Freewheeling Diodes. • Low Saturation Voltage at High Currents. • Low Mechanical Stress Design. • Hermetic Sealed Construction for Aerospace Applications. • Excellent Thermal Management. • Full Power Screened Hermetic Discretes. • TX, TXV, and S-Level Screening Available. • Consult Factory for: • Faster Switching Speeds; • Other Bridge Configurations and Terminal Styles. MAXIMUM RATINGS CHARACTERISTIC Collector to Emiter Voltage Gate to Collector Voltage Continuous Collector Current TB = 25 C TB = 90o C o SYMBOL VCES VGES I C1 I C2 I CM I LM EARV TOP & TSTG 1 JB PD1 PD2 VALUE 600 "20 400 200 600 200 5.6 -55 TO +150 0.14 1250 10 UNIT Volts Volts Amps Amps Amps m J o o Pulse Collector Current 1/ Clamped Inductive Load Current (TB = 125 EC, VCC = 480V, VGE = 15V, L = 30u H, RG = 10S Reverse Voltage Avalange Energy 1/ (IC = 200A) Operating and Storage Temperature Thermal Resistance, Junction to Base Total Module Dissipation @TB = 25o C Dissipation Derating from TB = 25o C to TB = 150o C 1/ Pulse Duration Limited by TJMAX; Repetative Rating C/W W W/o C ELECTRICAL SCHEMATIC NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: PM0010A PRELIMINARY 14005 Stage Road - Santa Fe Springs, Ca 90670 Phone: (562) 404-4474 - Fax: (562) 404-1773 SOLID STATE DEVICES, INC. ELECTRICAL CHARACTERISTICS @ TJ =25o C (Unless Otherwise Specified) RATING SYMBOL MIN MAX UNIT Collector - Emitter Breakdown Voltage (ICES = 250:A, VGE = 0V) Gate - Emitter Threshold Voltage (IC = 5m A, VCE = VGE) Collector-Emitter Saturation Voltage (IC = 200A, VGE = 15V) Gate-Emitter Leakage Current (VGE = "20V, VCE = 0V) Collector Leakage Current (VCE = 480V, VGE = 0V) Anti-Parallel Diode Forward Voltage (IF = 200A, TB = 25o C) (TB = 25o C) (TB = 90o C) BVCES VGE(th) VCE(sat)2...