SRM12UF Datasheet | SSDI

FEATURES : - - - - - - - - - - 1/ Replaces DO-4 and DO-5 Ultra Fast Recovery PIV to 1200 Volts Low Reverse Leakage Hermetically Sealed Void-Free Construction 1/ Monolithic Single Chip Construction High Surge Rating Low Thermal Resistance Equivalent to 1N6690 - 1N6693. TX, TXV and Space Level Screening Available PIND Testing not required on Void-Free Devices per MIL-PRF-19500 Maximum Ratings Peak Repetitive Reverse and DC Blocking Voltage SRM6UF SRM8UF SRM10UF SRM12UF SYMBOL VRRM VRWM VR Io VALUE 600 800 1000 1200 20 UNITS Volts Average Rectified Forward Current (Resistive Load, 60Hz, Sine Wave, TC = 100 o C Peak Surge Current (8.3 ms Pulse, Half Sine Wave Superimposed on Io, allow junction to reach equilibrium between pulses, TA = 25o C) Operating and Storage Temperature Maximum Thermal Resistance Junction to Case Axial Lead, L = 3/8" ( ) Square Tab (SMS) Button (BTR) Amps IFSM Top & Tstg RθJL RθJE RθJC 375 -65 TO +175 3.0 2.5 1.0 Amps o C o C/W NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0129E SRM6UF, SMS, & BTR thru SRM12UF, SMS, & BTR SOLID STATE DEVICES, INC. 14830 Valley View Blvd - La Mirada, Ca 90638 Phone: (562) 404-7855 - Fax: (562) 404-1773 ssdi@ssdi-power. - .ssdi-power. Electrical Characteristics Instantaneous Forward Voltage Drop (IF = 20ADC, 300 - 500 µsec Pulse) Reverse Leakage Current (Rated VR , 300µsec pulse minimum) Junction Capacitance (VR = 10VDC, TA = 25o C, f = 1MHz) Reverse Recovery Time (IF = 500 m A, IR = 1 A, IRR = 250 m A, TA = 25o C) CASE OUTLINE: Axial Leaded ( ) SYMBOL TA = 25o C TA = -55o C TA = 25o C TA = 100o C VF1 VF2 IR1 IR2 CJ t RR MAXIMUM 1.9 2.2 10 2.0 250 75 UNITS VDC µA m A p F nsec CASE OUTLINE: Surface Mount Square Tab...