SSR05C50 Datasheet | SSDI

Features : - 600V Silicon Carbide Schottky Rectifier - New Semiconductor Material - Switching Behavior Benchmark - No Reverse Recovery - No Forward Recovery - No Switching Time Change Over Temperature - Hermetic Packages Available Maximum Ratings Peak Repetitive Reverse and Peak Surge Reverse Voltage Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave) Non Repetitive Peak Surge Current (8.3 ms Pulse, Half Sine Wave Superimposed on IO) I2t Value Power Dissipation Operating & Storage Temperature Maximum Thermal Resistance Junction to Case TO-252 (D1) Cerpack (G) SMD.5 (S.5) SSR05C50 SSR05C60 Symbol VRRM VRSM Io IFSM I2t PD Top & Tstg RθJC Value 500 600 5 12.5 0.78 36.5 -55 to +175 4.1 SMD.22 (S.22) Units Volts Amps Amps A2s Watts ºC ºC/W NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RS0016F Solid State Devices, Inc. 14830 Valley View Blvd - La Mirada, Ca 90638 Phone: (562) 404-7855 - Fax: (562) 404-1773 ssdi@ssdi-power. - .ssdi-power. SSR05C60 Series Electrical Characteristic Instantaneous Forward Voltage Drop (IF = 5A, TJ = 25ºC, 300 µsec pulse) Instantaneous Forward Voltage Drop (IF = 5A, TJ = 150ºC, 300 µsec pulse) Reverse Leakage Current (VR = Rated VR, TJ = 25ºC, 300 µsec pulse min) Reverse Leakage Current (VR = Rated VR, TJ = 100ºC, 300 µsec pulse min) Junction Capacitance (VR =10 VDC, TC = 25ºC, f = 1MHz) Total Capacitive Charge Symbol VF1 VF2 IR1 IR2 CJ QC Min - - - - - - - - - - - -...