SSR2010J Datasheet | SSDI

FEATURES : - - - - - - - - - - PIV: 100 Volts Average Output Current 25 Amps Low Reverse Leakage Current Low Forward Voltage Drop Guard Ring for Overvoltage Protection Isolated Hermetically Sealed Package Custom Lead Forming Available Eutectic Die Attach Ultrasonic Aluminum Wire Bonds 175°C Operating Junction Temperature TX, TXV, and Space Level Screening Available. Consult Factory. - MAXIMUM RATINGS 1/ Peak Repetitive Reverse Voltage and DC Blocking Voltage Average Rectified Forward Current 2/ (Resistive Load, 60 Hz, Sine Wave, TA = 25°C) Peak Surge Current 2/ (8.3 ms Pulse, Half Sine Wave, Superimposed on Io, Allow Junction to reach equilibrium between pulses, TA = 25°C) Operating and Storage Temperature Maximum Thermal Resistance (Junction to Case) 2/ Symbol VRRM VRWM VR IO IFSM TOP & Tstg RθJC Value 100 20 300 -65 to +175 1.0 Unit Volts Amps Amps ° ° C/W Available in the Following Configurations: Rectifier: SSR2010J, SSR2010JDB, and SSR2010JUB mon Cathode Centertap: SSR2010CTJ, SSR2010CTJDB, and SSR2010CTJUB (See Data Sheet RS0073) mon Anode Centertap: SSR2010CAJ, SSR2010CAJDB, and SSR2010CAJUB (See Data Sheet RS0073) NOTE: 1/ 2/ at room temperature, unless otherwise specified pins 2 and 3 connected together NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RS0087G Solid State Devices, Inc. 14701 Firestone Blvd - La Mirada, Ca 90638 Phone: (562) 404-4474 - Fax: (562) 404-1773 ssdi@ssdi-power. - .ssdi-power. SSR2010J Series Symbol IF = 10 A IF = 15 A IF = 20 A IF = 10 A TA = 25°C TC = 100°C VF1 VF2 VF3 VF4 IR1 IR2 CJ ELECTRICAL CHARACTERISTICS (per leg) Instantaneous Forward Voltage Drop (TA = 25°C, 300 µs Pulse) Instantaneous Forward Voltage Drop (TA = -55°C, 300 µs Pulse) Reverse Leakage Current (Rated VR, 300 µs pulse minimum) Junction Capacitance (VR = 10 Vdc, TA = 25°C, f = 1MHz) CASE OUTLINE: TO-257 (Suffix J) PIN OUT: Rectifier...